P-N Junction Hole Diffusion Simulation
Visualizing charge carrier movement in semiconductor materials
Theoretical Background
In an unbiased p-n junction, holes diffuse from the p-region to the n-region due to the concentration gradient. This fundamental process occurs because:
Diffusion Current Principle
Charge carriers naturally move from regions of higher concentration to regions of lower concentration. In semiconductors, this creates a diffusion current that continues until balanced by the built-in electric field.
The p-region has a high concentration of holes (majority carriers) while the n-region has few holes (minority carriers). This concentration difference drives the diffusion process visualized in this simulation.
Note that some reverse diffusion occurs (electrons moving from n to p), but at a much lower rate due to the energy barrier created by the junction potential.
