P-Type Silicon Semiconductor
Visualizing majority and minority carriers in doped silicon
Simulation Parameters
Theoretical Background
This simulation demonstrates the behavior of charge carriers in p-type silicon, where trivalent atoms (like Boron or Aluminum) are added as dopants to pure silicon.
P-Type Semiconductor Characteristics
In p-type silicon:
- Holes are majority carriers (from acceptor impurities)
- Electrons are minority carriers (from thermal generation)
- Trivalent atoms (3 valence electrons) serve as dopants
The correct answer to the question is: Holes are majority carriers and trivalent atoms are the dopants.
Adjust the dopant concentration to see how it affects the number of holes, and the temperature to observe thermal generation of electron-hole pairs.
