Semiconductor Doping Simulation

Semiconductor Doping Simulation

Carrier Concentration Calculations

Given: Pure Si crystal has 5×1028 atoms/m3

Doped with 1 ppm As (pentavalent)

Donor concentration (ND) = 5×1022 m-3

Intrinsic concentration (ni) = 1.5×1016 m-3

Electron concentration (ne) ≈ ND = 5×1022 m-3

Hole concentration (nh) = ni2/ND = 4.5×109 m-3

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